^zmi-l-onauctoi !/ loaucti, ljnc. 20 stern ave. springfield, new jersey 07081 u.s.a. power integrated circuit switching regulator 5 amp positive and negative power output stages features ? designed and characterized for switching regulator applications ? cost saving design reduces size, improves efficiency, reduces noise and rfi ? high operating frequency (to > 100khz) results in smaller inductor-capacitor filter and improved power supply response time ? high operating efficiency: typical 2a circuit performance ? rise and fall time <75ns efficiency >85% ? no reverse recovery spike generated by commutating diode (see note ? electrically isolated, 4-pin, to-66 hermetic case description esp switching regulator is a unique hybrid transistor circuit, specifically designed, constructed and spe- cified for use in high current switching regulator applications. the designer is thus relieved of one of the most time con- suming, tedious and critical aspects of switching regulator design: choosing the appropriate switching transistors and commutating diode, and empirically determining the optimum drive and bias conditions: telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pic600 PIC601 pic602 pic610 pic611 pic612 the pic600 series switching regulators are designed and char- acterized to be driven with standard integrated circuit voltage regulators. they are completely characterized over their entire operating range of ? 55c to -f 125c. the devices are enclosed in a special 4-pin to-66 package, hermetically sealed for high reliability. the hybrid circuit construction utilizes thick film resistors on a beryllia substrate for maximum thermal con- ductivity and resultant low thermal impedance. all of the active elements in the hybrid are fully passivated. application notes u-68 and u-76 provide a detailed descrip- tion of the hybrid circuit and design guidance for specific circuit applications. schematic 3 o2 drive common mechanical specifications pic600 .075 .210 050 .190 ^fj~ -h iy? dbiveo) [] .034 ,-jjj l4oaa~ input '" -m? -j 2* : .190 / 17 x max ?? i [d^^w ^? ? / w 1 m, v^\d ^iyp^ *" 'r\ti :|" '11 1 *? ^vqf/ -^ 1 u ( common (2) / ? ^^--.152 .3*) u-4*? ? |^ output(l) '142 PIC601 pic602 pic610 picg11 pic612 notes: 1. case is electrically isolated. 2- loads may be soldered to within >/ib" of base provided temperature- time exposure is less than 260"c for 10 seconds. 4-pin to-66 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
pic600 PIC601 pic602 pic610 pic611 pic612 absolute maximum ratings input voltage, v4.2 output voltage, v,.2 drive-input rever output current, i drive current, i, thermal resistance junction to case, e power switch commutating case to ambient, /. , rse voltage, v3 1 ' ce se, 6j c tch ing diode ent, ec_a rature range, tc in temperature, t ure range pictm 60v 60v 5v 15a -0.2a PIC601 80v 80v 5v 5a -0.2a. . . picg02 100v 100v 5v 5a 0.2a pici10 ?60v 60v 5v ? 5a 0.2a 4.0-c/w. 4.0c/w 60.0c/w ? 55cto+125"c + 150c ? 65c to +150c picii1 -80v 80v ?5v ? 5a 0.2a. . pic?12 -100v -100v -5v -5a 0.2a electrical specifications (at 25c unless noted) test current delay time current rise time voltage rise time voltage storage time voltage fall time current fall time efficiency (notes 2. & 4.) on-state voltage (note 3.) on-state voltage (note 3.) dioda forward voltage (note 3.) diode forward voltage (note 3.) off-state current off-state current diode reverse current diode reverse current symbol tdi trl *,, tly t(v tfi ? v4.,m v<-l|on| v2.i( |
